2SD1005 features world standard miniature package: sot-89. high collector to base voltage: v cbo 100v. excellent dc current gain linearity: h fe =80typ. (v ce =2v, i c =500ma). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5v collector current i c 1a collector current (pulse) * i c 1.5 a total power dissipation at 25 ambient temperature * junction temperature t j 150 storage temperature t stg -55to+150 *1. pw 10s,duty cycle 50% *2.whenmountedonceramicsubstrateof16cm 2 x0.7mm p t 2w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = 100v, i e =0 100 na emitter cutoff current i ebo v eb =5v,i c =0 100 na v ce =2v , i c = 100ma 90 200 400 v ce =2v , i c = 500ma 25 80 collector-emitter saturation voltage * v ce(sat) i c = 500ma , i b = 50ma 0.15 0.5 v base-emitter saturation voltage * v be(sat) i c = 500ma , i b = 50ma 0.9 1.5 v base-emitter voltage * v be v ce =10v , i c = 10ma 600 630 700 mv gain bandwidth product f t v ce =5v,i e = -10ma 160 mhz output capacitance c ob v cb = 10v , i e = 0 , f = 1.0mhz 12 pf *. pw 350s,duty cycle 2% dc current gain * h fe h fe classification marking bw bv bu hfe 90 180 135 270 200 400 smd type transistors smd type transistors smd type transistors smd type transistors smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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